Installation type | Base installation |
packing | pallet |
series | - |
Part status | On sale |
working temperature | -40°C ~ 175°C(TJ) |
Encapsulation/Housing | module |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 250W(Tj) |
FET Type | 2 N-channels(two) |
Drain source voltage (Vdss) | 1200V(1.2kV) |
Current at 25 ° C - continuous drain (Id) | 114A(Tc) |
On resistance (maximum) for different Ids and Vgs | 14 mΩ @ 100A,20V |
Vgs (th) (maximum) for different Ids | 4.3V @ 40mA |
Gate charge (Qg) at different Vgs (maximum) | 454nC @ 20V |
Input capacitance at different Vds (Ciss) (maximum) | 4707pF @ 800V |
FET function | SiC |